gated transistor वाक्य

Competitive offerings from Intel however continues to use conventional bulk CMOS technology for each process node, instead focusing on other venues such as HKMG and Tri-gate transistors to improve transistor performance.
Is there an article in which the term " source gated transistor " can be placed so that this apparent ignorance goes away ? talk ) 09 : 29, 13 September 2015 ( UTC)
However, in a legal action involving Bower and Dill, the Third Circuit Court of Appeals determined that Kerwin, Klein and Sarace were the true inventors of the self-aligned silicon gate transistor.
Wang coined and pioneered the fields of piezotronics and piezo-phototronics by introducing piezoelectric potential gated charge transport process in fabricating strain-gated transistors for new electronics, optoelectronics, sensors, and energy sciences.
Chenming Hu, Tsu-Jae King-Liu and Jeffrey Bokor ) to describe a nonplanar, double-gate transistor built on an SOI substrate, based on the earlier DELTA ( single-gate ) transistor design.

This process has the disadvantage of mechanically degrading the chip, however, so memory systems based on floating-gate transistors in general have short write-lifetimes, on the order of 10 5 writes to any particular bit.
It cites five other publications when it defines " source-gated transistor, " and it looks like the term has been used in publications since at least 2003 . talk ) 15 : 04, 13 September 2015 ( UTC)
Among microprocessor manufacturers, AMD, IBM, and Freescale describe their double-gate development efforts as FinFET development, whereas Intel avoids using the term to describe their closely related tri-gate architecture ( see # Tri-gate transistor ).
The device structure was referred to as a V-groove MOSFET device with the drain region replaced by a p-type Anode Region in this paper and subsequently as'the insulated-gate rectifier'( IGR ), the insulated-gate transistor ( IGT ), the conductivity-modulated field-effect transistor ( COMFET)
A huge advance in NVRAM technology was the introduction of the floating-gate transistor, which led to the introduction of " erasable programmable read-only memory ", or EPROM . EPROM consists of a grid of transistors whose " gate " terminal ( the " switch " ) is protected by a high-quality insulator.