self-bias मीनिंग इन हिंदी

उदाहरण वाक्य

1. The nonlinear change of sheath capacitance result in the nonlinear change of tuned substrate self - bias
2. A novel self - bias high - voltage device structure for the start - up circuit of an off - line switching model power supply ic is described
3. In this paper , the reasons why the tuned substrate self - bias jumped discontinuously and was bistable are revealed , and the factors affect the characteristic are given
4. Such variations are found that due to applied magnetic field from the substrate . the aspect and brightness of the glow and the self - bias voltage for the target changes significantly
5. Our research group first developed tuned substrate experiment in an icp system . a lc resonance circuit was connected to the substrate , and it is found that there were bistable , jumped delay phenomena in substrate self - bias
6. In a ccp system , there is a discontiguous characteristic on tuned substrate self - bias . when the impedance between substrate and ground was made increasingly inductive , a large negative dc potential developed on the substrate
7. Experimental results show that the bistable of tuned substrate self - bias was determined by discharge gas pressure , discharge power and tuning circuit parameters etc . the bistable exists is because of there is capacitive coupling in icp system and sheath capacitance is nonlinear
8. As a mix - mode chip , the application - specific controller including analog signal and digital signal processing block can be applied to receiving , amplifying , processing , controlling signals of pir , and offer a wide application in some fields . in analog circuits , by sub - threshold mosfet , a self - bias current source is presented , which has a high power supply restrain ratio and a complementary to absolute temperature characters
9. The chip can be widely used in mp3 player , pda , digital camera , cells phone and portable products etc . this thesis first introduces the basic theory of switching power supply . the operating theory of this circuit has been demonstrated . the operating principle and simulation analysis about band gap reference , self - biased current source , one shot circuit , hysteresis comparator , and current - limit circuit have been particularly expounded in this thesis
10. On the one hand , the design uses low voltage cascode op framework to improve its gain ; on the other hand , it applies self - bias and cascode structure to the whole sensing circuit . by using the improved method , we have successfully obtained low power consumption , low offset , high linear and high psrr ptat current generator under low power supply